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Micromachines | Free Full-Text | InGaN/GaN Distributed Feedback Laser  Diodes with Surface Gratings and Sidewall Gratings
Micromachines | Free Full-Text | InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings

Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting  Diode Chips | ACS Applied Electronic Materials
Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips | ACS Applied Electronic Materials

Group III-nitride lasers: a materials perspective - ScienceDirect
Group III-nitride lasers: a materials perspective - ScienceDirect

Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser  Grown on Si | ACS Photonics
Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si | ACS Photonics

Laser slicing: A thin film lift-off method for GaN-on-GaN technology -  ScienceDirect
Laser slicing: A thin film lift-off method for GaN-on-GaN technology - ScienceDirect

Thermal analysis of GaN-based laser diode mini-array<xref  rid="cpb_27_9_094208_fn1" ref-type="fn">*</xref><fn  id="cpb_27_9_094208_fn1"><label>*</label><p>Project supported by the  National Key Research and Development Program of China (Grant Nos ...
Thermal analysis of GaN-based laser diode mini-array<xref rid="cpb_27_9_094208_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_094208_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos ...

KYOCERA Develops New GaN Laser Chip, World's Smallest* to be Mass-Produced  from Silicon Working Substrate | News | Newsroom | KYOCERA
KYOCERA Develops New GaN Laser Chip, World's Smallest* to be Mass-Produced from Silicon Working Substrate | News | Newsroom | KYOCERA

ITRI and Ganvix Extend JV to Commercialize Innovative Laser Technology - EE  Times Asia
ITRI and Ganvix Extend JV to Commercialize Innovative Laser Technology - EE Times Asia

Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser  diodes with a reduction of carrier loss in the waveguide layers: Journal of  Applied Physics: Vol 130, No 17
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17

PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD  System | Semantic Scholar
PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System | Semantic Scholar

Kyocera process for world's smallest GaN laser IC
Kyocera process for world's smallest GaN laser IC

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by  plasma-assisted molecular beam epitaxy - Advances in Engineering
Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy - Advances in Engineering

Gallium-Nitride Diode Lasers | Ferdinand-Braun-Institut
Gallium-Nitride Diode Lasers | Ferdinand-Braun-Institut

Smart-cut-like laser slicing of GaN substrate using its own nitrogen |  Scientific Reports
Smart-cut-like laser slicing of GaN substrate using its own nitrogen | Scientific Reports

Micromachines | Free Full-Text | Improving Output Power of InGaN Laser  Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells
Micromachines | Free Full-Text | Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells

High efficient GaN-based laser diodes with tunnel junction: Applied Physics  Letters: Vol 103, No 4
High efficient GaN-based laser diodes with tunnel junction: Applied Physics Letters: Vol 103, No 4

Schematic cross-section of gallium nitride (GaN)-based epitaxial wafer... |  Download Scientific Diagram
Schematic cross-section of gallium nitride (GaN)-based epitaxial wafer... | Download Scientific Diagram

Structure of GaN laser. | Download Scientific Diagram
Structure of GaN laser. | Download Scientific Diagram

BluGlass Announces Entry into GaN Laser Diode Business
BluGlass Announces Entry into GaN Laser Diode Business

ganld - tangweipku
ganld - tangweipku

InGaN / GaN MQW Structure Epitaxial on Si for Violet LD
InGaN / GaN MQW Structure Epitaxial on Si for Violet LD

A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN:  Applied Physics Letters: Vol 107, No 15
A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN: Applied Physics Letters: Vol 107, No 15

Reducing power losses in indium gallium nitride laser diodes on silicon
Reducing power losses in indium gallium nitride laser diodes on silicon

World's smallest mass-produced GaN laser chip from silicon working substrate
World's smallest mass-produced GaN laser chip from silicon working substrate

Researching | GaN-based ultraviolet microdisk laser diode grown on Si
Researching | GaN-based ultraviolet microdisk laser diode grown on Si